BH62UV1601
PIN DESCRIPTIONS
Name
Function
These 21 address inputs select one of the 2,048K x 8 bit in the RAM
A0-A20 Address Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
8 bi-directional ports are used to read data from or write data into the RAM.
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output
Ports
VCC
Power Supply
Ground
VSS
TRUTH TABLE
MODE
CE2
X
I/O OPERATION
VCC CURRENT
CE1
WE
X
OE
X
H
X
L
L
L
Chip De-selected
(Power Down)
High Z
ICCSB, ICCSB1
L
X
X
Output Disabled
Read
H
H
H
H
H
High Z
DOUT
DIN
ICC
ICC
ICC
H
L
Write
L
X
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
ABSOLUTE MAXIMUM RATINGS (1)
OPERATING RANGE
AMBIENT
TEMPERATURE
SYMBOL
VTERM
TBIAS
PARAMETER
RATING
-0.5(2) to 4.6V
-40 to +125
-60 to +150
1.0
UNITS
V
RANG
VCC
Terminal Voltage with
Industrial
-40OC to + 85OC
1.65V ~ 3.6V
Respect to GND
Temperature Under
Bias
OC
CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
TSTG
Storage Temperature
Power Dissipation
DC Output Current
OC
PT
W
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
IOUT
20
mA
Input
CIN
CIO
VIN = 0V
VI/O = 0V
10
15
pF
pF
Capacitance
Input/Output
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Capacitance
1. This parameter is guaranteed and not 100% tested.
2. –2.0V in case of AC pulse width less than 30 ns
Revision
Oct.,
1.2
2008
R0201-BH62UV1601
2
BSI [ BRILLIANCE SEMICONDUCTOR ]
