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BH62UV8001DI55 参数 Datasheet PDF下载

BH62UV8001DI55图片预览
型号: BH62UV8001DI55
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 1M ×8位 [Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 148 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH62UV8001  
n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)  
PARAMETER  
PARAMETER  
Power Supply  
TEST CONDITIONS  
MIN.  
1.65  
TYP.(1)  
MAX.  
UNITS  
V
NAME  
VCC  
--  
--  
--  
--  
--  
--  
--  
3.6  
0.4  
0.6  
VCC=1.8V  
VCC=3.6V  
VCC=1.8V  
VCC=3.6V  
Input Low Voltage  
-0.3(2)  
V
VIL  
VIH  
1.4  
2.2  
Input High Voltage  
VCC+0.3(3)  
V
VIN = 0V to VCC  
,
IIL  
Input Leakage Current  
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
--  
--  
--  
1
1
uA  
uA  
V
CE1 = VIH or CE2 = VIL  
VI/O = 0V to VCC,  
CE1 = VIH or CE2 = VIL or OE = VIH  
ILO  
VCC = Max, IOL = 0.1mA  
VCC = Max, IOL = 2.0mA  
VCC = Min, IOH = -0.1mA  
VCC = Min, IOH = -1.0mA  
CE1 = VIL, CE2 = VIH,  
0.2  
0.4  
VCC=1.8V  
VCC=3.6V  
VCC=1.8V  
VCC=3.6V  
VCC=1.8V  
VCC=3.6V  
VCC=1.8V  
VCC=3.6V  
VCC=1.8V  
VCC=3.6V  
VCC=1.8V  
VCC=3.6V  
VOL  
VOH  
ICC  
VCC-0.2  
2.4  
--  
V
6
8
Operating Power Supply  
Current  
--  
--  
--  
--  
mA  
mA  
mA  
uA  
(4)  
IDQ = 0mA, f = FMAX  
8
12  
CE1 = VIL and CE2 = VIH,  
IDQ = 0mA, f = 1MHz  
1.0  
1.5  
1.5  
2.0  
0.5  
1.0  
12  
Operating Power Supply  
Current  
ICC1  
ICCSB  
ICCSB1  
CE1 = VIH, or CE2 = VIL,  
IDQ = 0mA  
Standby Current TTL  
--  
CE1VCC-0.2V or CE20.2V,  
VINVCC-0.2V or VIN0.2V  
2.0  
2.5(5)  
Standby Current CMOS  
15  
1. Typical characteristics are at TA=25OC and not 100% tested.  
2. Undershoot: -1.0V in case of pulse width less than 20 ns.  
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.  
4. FMAX=1/tRC.  
5. VCC=3.0V  
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)  
SYMBOL  
VDR  
PARAMETER  
VCC for Data Retention  
Data Retention Current  
TEST CONDITIONS  
MIN.  
1.0  
--  
TYP. (1)  
MAX.  
UNITS  
CE1VCC-0.2V or CE20.2V,  
VINVCC-0.2V or VIN0.2V  
CE1VCC-0.2V or CE20.2V,  
VINVCC-0.2V or VIN0.2V  
--  
1.2  
--  
--  
7.0  
--  
V
(3)  
ICCDR  
uA  
ns  
ns  
VCC=1.2V  
Chip Deselect to Data  
Retention Time  
tCDR  
tR  
0
See Retention Waveform  
(2)  
Operation Recovery Time  
tRC  
--  
--  
1. Typical characteristics are at TA=25OC and not 100% tested.  
2. tRC = Read Cycle Time.  
n LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)  
Data Retention Mode  
DR1.0V  
V
VCC  
VCC  
tR  
VCC  
tCDR  
CE1VCC - 0.2V  
VIH  
VIH  
CE1  
Revision 1.1  
May 2006  
R0201-BH62UV8001  
3