BSI
BH62UV8000
n PIN DESCRIPTIONS
Name
Function
These 20 address inputs select one of the 1,048,576 x 8 bit in the RAM
A0-A19 Address Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
WE Write Enable Input
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
8 bi-directional ports are used to read data from or write data into the RAM.
DQ0-DQ7 Data Input/Output
Ports
VCC
Power Supply
Ground
VSS
n TRUTH TABLE
MODE
CE2
I/O OPERATION
VCC CURRENT
CE1
WE
X
OE
X
H
X
L
L
L
X
L
Chip De-selected
(Power Down)
High Z
ICCSB, ICCSB1
X
X
Output Disabled
Read
H
H
H
H
H
High Z
DOUT
DIN
ICC
ICC
ICC
H
L
Write
L
X
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
n ABSOLUTE MAXIMUM RATINGS (1)
n OPERATING RANGE
AMBIENT
TEMPERATURE
0OC to + 70OC
SYMBOL
VTERM
PARAMETER
RATING
-0.5(2) to 4.6V
-40 to +125
UNITS
RANG
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
V
Commercial
Industrial
1.65V ~ 3.6V
1.65V ~ 3.6V
TBIAS
OC
-25OC to + 85OC
TSTG
PT
Storage Temperature
Power Dissipation
DC Output Current
-60 to +150
OC
W
1.0
20
n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
IOUT
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
Input
CIN
CIO
VIN = 0V
VI/O = 0V
6
8
pF
pF
Capacitance
Input/Output
Capacitance
1. This parameter is guaranteed and not 100% tested.
2. –2.0V in case of AC pulse width less than 30 ns
R0201-BH62UV8000
Revision 1.0
2
Jul.
2005
BSI [ BRILLIANCE SEMICONDUCTOR ]
