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BH62UV4000SI55 参数 Datasheet PDF下载

BH62UV4000SI55图片预览
型号: BH62UV4000SI55
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 512K ×8位 [Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit]
分类和应用: 存储静态存储器
文件页数/大小: 12 页 / 397 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH62UV4000  
n AC TEST CONDITIONS  
n KEY TO SWITCHING WAVEFORMS  
(Test Load and Input/Output Reference)  
Input Pulse Levels  
VCC / 0V  
1V/ns  
WAVEFORM  
INPUTS  
OUTPUTS  
Input Rise and Fall Times  
MUST BE  
STEADY  
MUST BE  
STEADY  
Input and Output Timing  
Reference Level  
0.5Vcc  
tCLZ1, tCLZ2, tOLZ, tCHZ1  
tCHZ2, tOHZ, tWHZ, tOW  
,
MAY CHANGE  
FROM HTO L”  
WILL BE CHANGE  
FROM HTO L”  
CL = 5pF+1TTL  
CL = 30pF+1TTL  
Output Load  
Others  
MAY CHANGE  
WILL BE CHANGE  
FROM LTO H”  
FROM LTO H”  
ALL INPUT PULSES  
DONT CARE  
ANY CHANGE  
PERMITTED  
VCC  
1 TTL  
CHANGE :  
STATE UNKNOW  
90%  
90%  
Output  
10%  
10%  
GND  
(1)  
®
¬
®
¬
CENTER LINE IS  
HIGH INPEDANCE  
OFFSTATE  
CL  
DOES NOT  
APPLY  
Rise Time:  
1V/ns  
Fall Time:  
1V/ns  
1. Including jig and scope capacitance.  
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)  
READ CYCLE  
JEDEC  
PARAMETER  
NAME  
CYCLE TIME : 55ns  
PARANETER  
DESCRIPTION  
Read Cycle Time  
UNITS  
NAME  
MIN.  
TYP.  
--  
MAX.  
tAVAX  
tAVQX  
tE1LQV  
tGLQV  
tE1LQX  
tGLQX  
tE1HQZ  
tGHQZ  
tAVQX  
tRC  
tAA  
tACS  
tOE  
55  
--  
--  
55  
55  
30  
--  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
--  
Chip Select Access Time  
--  
--  
Output Enable to Output Valid  
Chip Select to Output Low Z  
Output Enable to Output Low Z  
Chip Select to Output High Z  
Output Enable to Output High Z  
Data Hold from Address Change  
--  
--  
tCLZ  
tOLZ  
tCHZ  
tOHZ  
tOH  
10  
10  
--  
--  
--  
--  
--  
30  
25  
--  
--  
--  
10  
--  
n SWITCHING WAVEFORMS (READ CYCLE)  
READ CYCLE 1 (1,2,4)  
tRC  
ADDRESS  
tAA  
tOH  
tOH  
DOUT  
Revision 1.2  
R0201-BH62UV4000  
4
Aug.  
2006