SOLDERING TEMPERATURE (3secs max 2mm from body)
ALL TYPES
260 OC max
SSA-005E&S
INFRARED DIODES
IR-Emitting Diodes in Miniature (T-3/4) Package
PARAMETER
CONDITIONS
SYMBOL
VALUE
j
+12°
Viewing Angle
CQY 37N
lp
Pv
950nm
170mW
450K/W
Peak Wavelength
Power Dissipation
RthJA
Thermal Resistance Junction/
Ambient
IF
100mA
400ns
Forward Current
Rise Time
IF=1.5A, tp/T=0.01,
tp<10ms
Tr
IF=1.5A, tp/T=0.01,
tp<10ms
Tf
450ns
Fall Time
Tj
Tstg
Ie
100°C
Junction Temperature
-25…+100°C
Storage Temperature Range
IF=50mA, tp<20ns
Min = 2.2mW/
sr
Radiant Intensity
CQY 37N
Typ = 5mW/sr
PHOTO
DETECTORS Silicon -NPN - Phototransistors
PARAMETER
CONDITIONS
SYMBOL
VALUE
j
+40°
+12°
Viewing Angle
BPW 17N
lp
825nm
Peak Wavelength
RthJA
450K/W
Thermal Resistance Junction/
Ambient
IF
Tr
100mA
4.8ms
Forward Current
Vs=5V, Ic=5mA, RL=100W
Vs=5V, Ic=5mA, RL=100W
Rise Time
Tf
5.0ms
Fall Time
Tj
100°C
Junction Temperature
Storage Temperature Range
Collector Light Current BPW 17N
Tstg
Ica
-55…+100°C
Ee=1mW/cm2, l=950nm,
Vce=5V
Min = 0.5mA
Typ = 1.0mA
VCEO
ICEO
32V
Collector Emitter Voltage
Collector Dark Current
VCE = 20V, E = 0
Typ = 1nA
Max = 200nA
BEDFORD OPTO TECHNOLOGY LTD
1,BIGGAR BUSINESS PARK, BIGGAR,LANARKSHIRE, ML12 6FX
Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009
Website: bot.co.uk E-mail: bill@bot.co.uk
ISS B 23.8.07