SPECIFICATIONS (CONT)
At TA = –40°C to +85°C, fS = 800kHz, +VDIG = +VANA = +5V, –VANA = –5V, using internal reference and the 50Ω input resistor shown in Figure 4b, unless otherwise specified.
ADS7819P, U
TYP
ADS7819PB, UB
PARAMETER
CONDITIONS
MIN
MAX
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Specified Performance
+VDIG = +VANA
–VANA
+IDIG
+IANA
+4.75
–5.25
+5
–5
+16
+16
–13
+5.25
–4.75
*
*
*
*
*
*
*
*
*
V
V
mA
mA
mA
–IANA
Derated Performance
+VDIG = +VANA
–VANA
+4.5
–5.5
+5
–5
225
+5.5
–4.5
275
*
*
*
*
*
*
*
V
V
mW
2
Power Dissipation
fS = 800kHz
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
–40
–55
–65
+85
+125
+150
*
*
*
*
*
*
°C
°C
°C
Thermal Resistance (θJA
)
Plastic DIP
SOIC
75
75
*
*
°C/W
°C/W
NOTES: (1) LSB means Least Significant Bit. For the 12-bit, ±2.5V input ADS7819, one LSB is 1.22mV. (2) Typical rms noise at worst case transitions and
temperatures. (3) Measured with 50Ω in series with analog input. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale
or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the
effect of offset error. (5) All specifications in dB are referred to a full-scale ±2.5V input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-
to-(Noise+Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input over voltage.
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: VIN .............................................................................. ±25V
ELECTROSTATIC
DISCHARGE SENSITIVITY
REF .................................... +VANA +0.3V to AGND2 –0.3V
CAP ........................................... Indefinite Short to AGND2
Momentary Short to +VANA
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V
+VANA ................................................................................................... +7V
performance degradation to complete device failure. Burr-
+VDIG to +VANA ................................................................................. +0.3V
+VDIG ..................................................................................................... 7V
Electrostatic discharge can cause damage ranging from
BrownCorporationrecommendsthatallintegrated circuitsbe
–VANA ................................................................................................... –7V
handled and stored using appropriate ESD protection
Digital Inputs ............................................................ –0.3V to +VDIG +0.3V
methods.
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ................................................ +300°C
ORDERING AND PACKAGE INFORMATION
MINIMUM
MAXIMUM
INTEGRAL
LINEARITY
ERROR (LSB)
SIGNAL-TO-
(NOISE +
DISTORTION)
RATIO (dB)
SPECIFICATION
TEMPERATURE
RANGE
PACKAGE DRAWING
NUMBER(1)
MODEL
PACKAGE
ADS7819P
ADS7819PB
ADS7819U
ADS7819UB
±1
±0.75
±1
68
70
68
70
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
28-Pin Plastic DIP
28-Pin Plastic DIP
28-Pin SOIC
246
246
217
217
±0.75
28-Pin SOIC
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix D of Burr-Brown IC Data Book.
®
3
ADS7819
BB [ BURR-BROWN CORPORATION ]
