SPECIFICATIONS (CONT)
ELECTRICAL
TA = –25°C to +85°C, fS = 100kHz, VDIG = VANA = +5V, using internal reference, unless otherwise specified.
ADS7805P, U
ADS7805PB, UB
TYP
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
POWER SUPPLIES
Specified Performance
VDIG
VANA
IDIG
IANA
Must be ≤ VANA
+4.75
+4.75
+5
+5
0.3
16
+5.25
+5.25
✻
✻
✻
✻
✻
✻
✻
✻
V
V
mA
mA
mW
Power Dissipation
fS = 100kHz
100
✻
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
–25
–55
–65
+85
+125
+150
✻
✻
✻
✻
✻
✻
°C
°C
°C
Thermal Resistance (θJA
)
Plastic DIP
SOIC
75
75
✻
✻
°C/W
°C/W
NOTES: (1) LSB means Least Significant Bit. For the 16-bit, ±10V input ADS7805, one LSB is 305µV. (2) Typical rms noise at worst case transitions and
temperatures. (3) As measured with fixed resistors shown in Figure 4. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full
Scale or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes
the effect of offset error. (5) All specifications in dB are referred to a full-scale ±10V input. (6) Full-Power Bandwidth defined as Full-Scale input frequency at which
Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified performance after 2 x FS input overvoltage.
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-
Analog Inputs: VIN .............................................................................. ±25V
CAP .................................... +VANA +0.3V to AGND2 –0.3V
REF .......................................... Indefinite Short to AGND2,
Momentary Short to VANA
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V
Brown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
VANA ....................................................................................................... 7V
V
DIG to VANA ..................................................................................... +0.3V
VDIG ....................................................................................................... 7V
Digital Inputs ............................................................ –0.3V to +VDIG +0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ................................................ +300°C
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
PACKAGE INFORMATION
PACKAGE DRAWING
PRODUCT
PACKAGE
NUMBER(1)
ADS7805P
ADS7805PB
ADS7805U
ADS7805UB
Plastic DIP
Plastic DIP
SOIC
246
246
217
217
SOIC
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ORDERING INFORMATION
MINIMUM
SIGNAL-TO-
MAXIMUM
LINEARITY
ERROR (LSB)
(NOISE +
DISTORTION)
RATIO (dB)
SPECIFICATION
TEMPERATURE
RANGE
PRODUCT
PACKAGE
ADS7805P
ADS7805PB
ADS7805U
ADS7805UB
±4
±3
±4
±3
83
86
83
86
–25°C to +85°C
–25°C to +85°C
–25°C to +85°C
–25°C to +85°C
Plastic DIP
Plastic DIP
SOIC
SOIC
®
3
ADS7805
BB [ BURR-BROWN CORPORATION ]
