@vic
MMBTA94
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
TRANSISTOR( PNP
)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1.02
MMBTA94
FEATURES
Power dissipation
P
CM
: 0.35 W
(Tamb=25℃)
Collector current
I
CM :
-0.2 A
Collector-base voltage
V
(BR)CBO
: -400 V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS
(
Tamb=25
℃
otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V (BR)
CBO
V (BR)
CEO
V (BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
(
1
)
DC current gain
h
FE
(
2
)
h
FE
(
3
)
V
CE
(sat)
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
Transition frequency
V
BE
(sat)
f
T
Test
0.95±0.025
2.80±0.05
1.60±0.05
unless
conditions
MIN
-400
-400
-5
-0.1
-5
-0.1
80
70
60
-0.2
-0.3
-0.75
50
V
V
V
MHz
300
TYP
MAX
UNIT
V
V
V
μA
μA
μA
Ic= -100μA, I
E
=0
I
C
= -1 mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-400 V, I
E
=0
V
CE
=-400 V, I
B
=0
V
EB
= -4 V, I
C
=0
V
CE
=-10V, I
C
=-10 mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100 mA
I
C
=-10 mA,I
B
=-1mA
I
C
=-50 mA,I
B
=-5mA
I
C
=-10 mA,I
B
= -1 mA
V
CE
=-20V, I
C
=-10mA
f =30MHz
MARKING:4D
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com
0.35
2.92±0.05
1.9