EEPROM
AS58C1001
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
I/O0
I/O7
Ready/Busy
High Voltage Generator
I/O Buffer
and
Input Latch
OE\
Control Logic and Timing
CE\
WE\
RES\
A0
A6
Y Gating
Y Decoder
Address
Buffer and
Latch
X Decoder
Memory Array
A7
A16
Data Latch
MODE SELECTION
MODE
CE\
OE\
WE\
RES\
RDY/BUSY\1
I/O
READ
VIL
VIH
VIL
VIL
VIL
VIH
VH
X
DOUT
High-Z
High-Z
STANDBY
WRITE
X
X
High-Z
DIN
VIH
VIH
VIL
VIH
VH
VH
High-Z to VOL
High-Z
DESELECT
High-Z
WRITE
INHIBIT
VIH
X
X
X
X
X
X
---
---
---
---
VIL
DATA
POLLING
Data Out
(I/O7)
VIL
X
VIL
X
VIH
X
VH
VIL
VOL
PROGRAM
High-Z
High-Z
Notes:
1. RDY/Busy\ output has only active LOW VOL and HIGH impedance state. It can not go to HIGH (VOH) state.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS58C1001
Rev. 4.0 3/01
2
AUSTIN [ AUSTIN SEMICONDUCTOR ]
