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2SA1980E 参数 Datasheet PDF下载

2SA1980E图片预览
型号: 2SA1980E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管(一般的小信号放大器) [PNP Silicon Transistor (General small signal amplifier)]
分类和应用: 晶体放大器晶体管
文件页数/大小: 4 页 / 237 K
品牌: AUK [ AUK CORP ]
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2SA1980E  
Absolute maximum ratings  
Characteristic  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
(Ta=25°C)  
Unit  
V
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
-50  
-50  
V
-5  
V
-150  
150  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
(Ta=25°C)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
IC=-100µA, IE=0  
-50  
-50  
-5  
-
-
-
-
-
-
-
-
-
4
-
V
IC=-1mA, IB=0  
-
V
IE=-10µA, IC=0  
-
V
VCB=-50V, IE=0  
-0.1  
-0.1  
700  
-0.3  
-
µA  
µA  
-
Emitter cut-off current  
IEBO  
VEB=-5V, IC=0  
-
*
DC current gain  
hFE  
VCE=-6V, IC=-2mA  
IC=-100mA, IB=-10mA  
VCE=-10V, IC=-1mA  
VCB=-10V, IE=0, f=1MHz  
70  
-
Collector-Emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
80  
-
MHz  
pF  
Collector output capacitance  
Cob  
7
VCE=-6V, IC=-0.1mA  
f=1KHz, Rg=10K  
Noise figure  
NF  
-
-
10  
dB  
*: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.  
KST-4001-002  
2