Semiconductor
2N5551CN
NPN Silicon Transistor
Descriptions
•
General purpose amplifier
•
High voltage application
Features
•
High collector breakdown voltage : V
CBO
= 180V, V
CEO
= 160V
•
Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
Ordering Information
Type NO.
2N5551CN
Marking
2N5551C
Package Code
TO-92N
Outline Dimensions
4.20~4.40
4.20~4.40
unit :
mm
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max.
1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections
1. Emitter
2. Collector
3. Base
KSD-T0C061-000
1