MT90CB18T1
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
ITAV
Average On-State Current
Sine 180o;Tc=85℃
90
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
2000
1750
ITSM
Surge On-State Current
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
20000
15000
i2t
Circuit Fusing Consideration
A2s
Visol
Tvj
Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min
Operating Junction Temperature
3000
V
-40 to +130
-40 to +125
3±15%
℃
Tstg
Mt
Storage Temperature
℃
Mounting Torque
To terminals(M5)
To heatsink(M6)
Nm
Nm
Ms
5±15%
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
di/dt
150
A/us
Critical Rate of Rise of Off-State
Voltage, min.
dv/dt
a
TJ=TVJM ,2/3VDRM linear voltage rise
1000
50
V/us
m/s2
Maximum allowable acceleration
Thermal Characteristics
Symbol
Rth(j-c)
Item
Conditions
Junction to Case
Values
0.28
Units
℃/W
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.20
℃/W
Electrical Characteristics
Values
Min. Typ. Max.
Symbol
Item
Conditions
Units
VTM
Peak On-State Voltage, max.
T=25℃ IT =300A
1.65
V
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
IRRM/IDRM
20
mA
For power-loss
calculations only
(TVJ =125℃)
VTO
On state threshold voltage
0.9
2
V
Value of on-state
slope resistance. max
rT
TVJ =TVJM
mΩ
VGT
IGT
VGD
IGD
IL
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
TVJ =25℃ , VD =6V
3
150
0.25
6
V
TVJ =25℃ , VD =6V
mA
V
TVJ=125℃,VD =2/3VDRM
TVJ =125℃, VD =2/3VDRM
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
mA
mA
mA
300
150
600
250
IH
Holding current, max.
TVJ=25℃,
IG=1A, diG/dt=1A/us
tgd
tq
Gate controlled delay time
1
us
us
Circuit commutated turn-off time
TVJ =TVJM
100
Document Number: S-M0048
Rev.1.0, May.31, 2013
www.apt-semi.com
2
APTSEMI [ Jiangsu APT Semiconductor Co.,Ltd ]
