MT275C18T3
Electrical Characteristics
Values
Units
Symbol
Conditions
Min.
Typ.
Max.
1.6
VTM
T=25℃ ITM =750A
V
mA
W
IRRM/IDRM
PGM
IGM
TVJ =TVJM ,VR=VRRM ,VD=VDRM
30
12
3
A
VGT
IGT
TVJ =25℃ , VD =6V
TVJ =25℃ , VD =6V
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
2
V
150
mA
mA
mA
IL
400
200
IH
Performance Curves
400
W
1000
A
cont
800
rec.180
sin.180
300
rec.120
rec.90
Typ.
600
rec.60
rec.30
200
100
400
200
IT
Max
25℃
- - -125℃
PTAV
0
0
ITAV
100
200
A 300
0
VTM
0.5
1.0
1.5
V
2.0
Fig1. Power dissipation
Fig2.Forward Characteristics
0.2
50HZ
8000
A
℃/ W
Zth(j-C)
0.1
4000
0
0
0.001
t
0.01
0.1
1
10
S 100
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
Document Number: S-M0041
Rev.1.0, May.31, 2013
www.apt-semi.com
2
APTSEMI [ Jiangsu APT Semiconductor Co.,Ltd ]
