TF25A60
Electrical Characteristics
Ratings
Typ.
Symbol
Items
Conditions
Unit
Min.
Max.
V
D = VDRM, Single Phase, Half Wave
Repetitive Peak Off-State
Current
IDRM
VTM
----
----
3 .0
mA
V
Tj = 125 °C
ITM = 35A, Inst. tp=380㎲
Peak On-State Voltage
__
─
─
─
─
─
─
----
1.55
50
─
─
─
─
─
─
─
0.2
I+
Ⅰ
GT1
I -
V
V
D = 12 V, RL=33 Ω
Gate Trigger Current
50
mA
Ⅱ
GT1
I -
50
Ⅲ
Ⅰ
GT3
V+
1.5
1.5
1.5
GT1
V-GT1
D = 12 V, RL=33 Ω
Gate Trigger Voltage
V
Ⅱ
V-GT3
VGD
Ⅲ
TJ = 125 °C, VD=VDRM, RL=3.3kΩ
Non-Trigger Gate Voltage
V
-----
TJ = 125 °C,
VD=2/3 VDRM
Critical Rate of Rise Off-State
Voltage
dv/dt
IH
40
----
----
V/㎲
Holding Current
I =0.5A
--
80
mA
---
T
2/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
