AO7405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
300
200
100
0
VDS=-15V
ID=-1.4A
8
Ciss
6
4
Coss
2
Crss
0
0
1
2
3
4
5
6
0
5
10
15
-VDS (Volts)
20
25
30
Q
g (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
20
15
10
5
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
DC
10s
0.0
0
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
θJA=425°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
1
0.1
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: April 2011
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
