AO4944
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
30
V
V
DS=30V, VGS=0V
0.01
5
0.1
mA
10
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.6A
0.1
VGS(th)
ID(ON)
1.5
40
1.8
2.4
V
A
13
20
16
64
0.4
16
25
20
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=7A
DS=5V, ID=8.6A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
0.6
4.5
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1450 1885
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
224
92
VGS=0V, VDS=0V, f=1MHz
1.6
3.0
31
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
24
12.0
3.9
4.2
5.5
4.7
24.0
4.0
10
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=8.6A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
IF=8.6A, dI/dt=300A/µs
IF=8.6A, dI/dt=300A/µs
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12
ns
Qrr
6.8
nC
A:The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2OZ. Copper, in a still air environment with TA
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D: The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E: These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F: The current rating is based on the t<=10s junction to ambient thermal resistance rating.
Rev0:December 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
