AO4611
P-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
VDS=-48V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-10V, ID=-4.9A
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-1.9
-30
A
34
58
42
72
52
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4.4A
VDS=-5V, ID=-4.9A
IS=-1A,VGS=0V
42
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
17.8
-0.73
S
V
A
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2417 2900
179
pF
pF
pF
Ω
V
GS=0V, VDS=-30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
120
VGS=0V, VDS=0V, f=1MHz
1.9
2.3
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
45.2
22.8
5.8
9.6
9.8
6.1
44
55
28
nC
nC
nC
nC
ns
V
GS=-10V, VDS=-30V, ID=-4.9A
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=-10V, VDS=-30V, RL=6.2Ω,
ns
RGEN=3Ω
ns
12.7
32
ns
trr
IF=-4.9A, dI/dt=100A/µs
IF=-4.9A, dI/dt=100A/µs
42
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
42
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in anyvegniveanppalipcpalticioantiodnepdeenpdesnodns othnethueseurs'sesr'psescpifeiccibficoabrodadrdesdigensi.gTnh.eThceurcreunrrternattirnagtinisgbisasbeadseodn othnetht≤e1t≤0s10thsetrhmearml raelsrisetsaisntcaence
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev4: August 2005
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
