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AO4441L 参数 Datasheet PDF下载

AO4441L图片预览
型号: AO4441L
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 154 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4441L的Datasheet PDF文件第1页浏览型号AO4441L的Datasheet PDF文件第2页浏览型号AO4441L的Datasheet PDF文件第3页  
AO4441  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL  
10  
8
1500  
1000  
500  
0
VDS=-30V  
ID=-4A  
Ciss  
6
4
2
Coss  
Crss  
0
0
10  
20  
0
10  
20  
30  
-VDS (Volts)  
40  
50  
60  
-Qg (nC)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
100.0  
10.0  
1.0  
40  
30  
20  
10  
0
TJ(Max)=150°C, TA=25°C  
RDS(ON)  
TJ(Max)=150°C  
TA=25°C  
10µs  
limited  
100µs  
1ms  
10ms  
0.1s  
1s  
10s  
DC  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
Pulse Width (s)  
-VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=40°C/W  
1
0.1  
PD  
Ton  
T
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.