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AO4420 参数 Datasheet PDF下载

AO4420图片预览
型号: AO4420
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道MOSFET [30V N-Channel MOSFET]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 4 页 / 170 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4420的Datasheet PDF文件第1页浏览型号AO4420的Datasheet PDF文件第3页浏览型号AO4420的Datasheet PDF文件第4页  
AO4420  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
V
DS=24V, VGS=0V  
0.004  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
VDS=0V, VGS= ±12V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
VGS=10V, ID=13.7A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
100  
2
nA  
V
VGS(th)  
ID(ON)  
0.6  
40  
1.1  
A
8.3  
12.5  
9.7  
10.5  
15  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
VGS=4.5V, ID=12.7A  
VDS=5V, ID=13.7A  
IS=1A,VGS=0V  
12  
mΩ  
S
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
30  
37  
0.76  
1
5
V
Maximum Body-Diode Continuous Current  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
3656  
256  
4050  
pF  
pF  
pF  
VGS=0V, VDS=15V, f=1MHz  
VGS=0V, VDS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
168  
0.86  
1.1  
36  
SWITCHING PARAMETERS  
Qg(4.5V) Total Gate Charge  
30.5  
4.6  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
V
GS=4.5V, VDS=15V, ID=13.7A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
8.6  
5.5  
9
GS=10V, VDS=15V, RL=1.1,  
3.4  
7
R
GEN=3Ω  
tD(off)  
tf  
49.8  
5.9  
75  
11  
28  
16  
trr  
IF=13.7A, dI/dt=100A/µs  
IF=13.7A, dI/dt=100A/µs  
22.5  
12.5  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
nC  
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The  
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance  
rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA  
curve provides a single pulse rating.  
Rev 8 : Nov 2010  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.