AO4418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4418 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4418 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 11.5A (V
GS
= 20V)
R
DS(ON)
< 14mΩ (V
GS
= 20V)
R
DS(ON)
< 17mΩ (V
GS
= 10V)
R
DS(ON)
< 40mΩ (V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
S
S
G
D
D
D
D
D
SOIC-8
G
S
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
AF
Current
I
D
T
A
=70°C
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
Maximum
30
±25
11.5
9.7
40
3
2.1
20
60
-55 to 150
Units
V
V
A
I
DM
T
A
=25°C
T
A
=70°C
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
AF
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
