AO3703
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
V
DS=-16V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µΑ
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
DS=0V, VGS=±8V
±100
-1
nA
V
VGS(th)
ID(ON)
DS=VGS ID=-250µA
-0.3
-10
-0.6
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-2.7A
A
76
111
101
134
7
97
mΩ
TJ=125°C
135
130
190
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
V
GS=-2.5V, ID=-2A
VGS=-1.8V, ID=-1A
VDS=-5V, ID=-2.7A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
4
-0.78
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
540
72
pF
pF
pF
Ω
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
49
VGS=0V, VDS=0V, f=1MHz
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
6.1
0.6
1.6
10
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-2.7A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS=-4.5V, VDS=-10V, RL=2.8Ω,
GEN=3Ω
Turn-On Rise Time
12
R
tD(off)
tf
Turn-Off DelayTime
44
Turn-Off Fall Time
22
trr
IF=-2.7A, dI/dt=100A/µs
IF=-2.7A, dI/dt=100A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
7.5
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
0.5
0.1
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
34
5.2
0.8
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
10
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating. Rev0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICA
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
