Analog Power
AM30N10-70D
N-Channel 100-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
PRODUCT SUMMARY
r
DS(on)
(m )
V
DS
(V)
78 @ V
GS
= 10V
100
92 @ V
GS
= 4.5V
I
D
(A)
21
19
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
100
V
GS
Gate-Source Voltage
±20
T
C
=25°C
I
D
Continuous Drain Current
21
b
I
DM
Pulsed Drain Current
100
I
S
Continuous Source Current (Diode Conduction)
30
T
C
=25°C
P
D
50
Power Dissipation
T
J
, T
stg
-55 to 175
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
a
Symbol Maximum
R
θJA
50
R
θJC
3
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM30N10-70D_revC
ANALOGPOWER [ ANALOG POWER ]
