Analog Power
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-6 saves board space
Fast switching speed
High performance trench technology
AM1535CE
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
30
-30
0.09 @ V
GS
= 4.5V
0.18 @ V
GS
= 2.5V
0.21 @ V
GS
= -4.5V
0.29 @ V
GS
= -2.5V
I
D
(A)
1.5
1.1
-1.0
-0.9
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Symbol N-Channel P-Channel Units
Parameter
Drain-Source Voltage
V
DS
30
-30
V
Gate-Source Voltage
V
GS
8
-8
Continuous Drain Current
Pulsed Drain Current
b
a
o
o
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.5
1.3
0.7
0.25
0.3
0.21
1
0.8
-1.2
-0.25
0.3
0.21
o
A
A
W
C
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
THJA
Maximum Units
415
460
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1535CE_A
ANALOGPOWER [ ANALOG POWER ]
