InGaP HBT Technology
Optimized for a 50
System
Internal Reference Voltage
Integrated GSM/EDGE Power Control with Tem-
perature Compensation
•
Low Profile Surface Mount Package:
6 mm x 8 mm x 1 mm
•
RoHS Compliant Package, 250
o
C MSL-3
WCDMa MODe
•
HSDPA Compliant
•
High Efficiency:
41% @ P
OUT
= +28.5 dBm
21% @ P
OUT
= +16 dBm
•
Low Quiescent Current: 12 mA
•
Low Leakage Current in Shutdown Mode: <1
A
•
Internal Voltage Regulator Eliminates the Need for
External Reference Voltage
•
V
EN
= +2.4 V (+2.2 V min over Temp)
GMsK MODe
•
+35 dBm GSM850/900 Output Power
•
+33 dBm DCS/PCS Output Power
•
55 % GSM850/900 PAE
•
50 % DCS/PCS PAE
•
Power Control Range > 50 dB
•
EGPRS Capable (class 12)
eDGe MODe
•
+29 dBm GSM850/900 Output Power
•
+28.5 dBm DCS/PCS Output Power
•
27 % GSM850/900 PAE
•
30 % DCS/PCS PAE
•
-63 dBc/30 kHz Typical ACPR (400 kHz)
•
-77 dBc/30 kHz Typical ACPR (600 kHz)
•
•
•
•
Features
WCDMa/GsM/GPrs/Polar eDGe
Power Amplifier Module
with Integrated Power Control
Data sheet - rev 2.0
InGaP HBT MMIC technology to provide reliability,
temperature stability, and ruggedness. This penta-
band module consists of three amplifier chains; one
to support GSM/GPRS/EGPRS in cellular bands, one
to support GSM/GPRS/EGPRS in DCS/PCS bands,
and one to support WCDMA in the IMT band. In ad-
dition, the AWT6223R module includes an internal
reference voltage and integrated power control with
temperature compensation for use in GMSK and
8-PSK modes of operation. These features facilitate
fast and easy production calibration, minimize per-
formance variation over temperature, and reduce the
number of external components required.
The WCDMA PA incorporates ANADIGICS’ HELP2
technology. Through selectable bias modes, the
AWT6223R achieves optimal efficiency across
different output power levels, specifically at low
and mid-range power levels where the PA typically
operates, thereby dramatically increasing handset
talk-time and standby-time. Its built-in voltage regulator
eliminates the need for an external reference voltage
and switch components, reducing PCB area and BOM
costs. All of the RF ports for this device are internally
matched to 50
.
The RF inputs GSM_IN and DCS/
PCS_IN both have shunt resistors to ground to main-
tain a good input VSWR as the V
RAMP
power control
voltage is varied. Internal DC blocks are provided at
the RF outputs.
C
EXT2
WCDMA_IN
V
MODE
V
EN
DCS/PCS_IN
BS
T
X
_EN
V
BATT
C
EXT1
V
RAMP
GSM850/900_IN
1
2
3
4
5
6
7
8
9
10
11
V
CC_GSM
CMOS Bias/Power
Controller
Voltage Regulator
and Bias Control
aWt6223r
TM
aPPLICatIONs
•
22
21
20
19
18
17
16
15
14
13
12
V
CC_WCDMA
WCDMA_OUT
GND
DCS/PCS_OUT
GND
GND
C
EXT3
GND
GND
GSM850/900_OUT
3G Handsets, Smartphones, Data Devices Incor-
porating:
•
WCDMA (IMT)
• GSM850/GSM900/DCS/PCS
Bands
•
GMSK and 8-PSK (Open Loop Polar)
Modulations
PrODuCt DesCrIPtION
The AWT6223R WEDGE module supports dual, tri,
or quad band operation using GMSK/GPRS and
8-PSK (open loop polar) modulations, and WCDMA
operation in the IMT band. The AWT6223R mod-
ule is manufactured using ANADIGICS’ advanced
11/2008
Figure 1: Block Diagram
ANADIGICS [ ANADIGICS, INC ]
