Features
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•
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Quad-band GsM/GPrs/eDGe
Power Amplifier Module
with Integrated Power Control
Data sheet - rev 2.0
aWt6155
Internal Reference Voltage
Integrated Power Control
InGaP HBT Technology
ESD Protection on All Pins (2.5 kV)
Low profile 1.0 mm
Small Package Outline 5 mm x 5 mm
EGPRS Capable (class 12)
RoHS Compliant Package, 250
o
C MSL-3
AW
T
GMsK MODe
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+34.8 dBm GSM850/900 Output Power
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+33 dBm DCS/PCS Output Power
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55 % GSM 900 PAE
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51 % DCS/PCS PAE
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Power control range > 50 dB
eDGe MODe
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+29 dBm GSM850/900 Output Power
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+28.5 dBm DCS/PCS Output Power
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28% GSM850/900 PAE
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28% DCS/PCS PAE
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-64 dBc Typical ACPR (400 kHz)
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-74 dBc Typical ACPR (600 kHz)
615
5R
M37 Package
11 Pin 5 mm x 5 mm x 1.0 mm
surface Mount Module
aPPLICatIONs
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Dual/Tri/Quad Band Handsets, PDAs, and
Data Devices
The amplifier’s power control range is typically
55 dB, with the output power set by applying
an analog voltage to V
RAMP
. All of the RF ports
for this device are internally matched to 50
.
PrODuCt DesCrIPtION
This power amplifier module supports dual, tri
and quad band applications for GMSK and 8-PSK
modulation schemes using a polar architecture.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplification chain is optimized for excellent
EDGE efficiency, power, and linearity in a Polar loop
environment while maintaining high efficiency in the
GSM/GPRS mode.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the number
of external components required to complete a power
control function.
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS
T
X
_EN
V
BATT
V
RAMP
GSM850/900_IN
GSM850/900_OUT
Bias/Power
Control
GSM850/900
Figure 1: Block Diagram
02/2009
ANADIGICS [ ANADIGICS, INC ]
