AS4C256K16E0
®
EDO page mode cycle
-30
-35
-50
Std
Symbol
Parameter
Min
12
–
Max
–
Min
14
–
Max
–
Min
25
–
Max Unit
ns
23 ns
Notes
14
tPC
Read or write cycle time
Access time from CAS precharge
CAS precharge time
–
tCAP
19
–
21
–
13
tCP
3
4
5
–
–
–
ns
ns
ns
tPCM
tCRW
tRASP
EDO page mode RMW cycle
Page mode CAS pulse width (RMW)
RAS pulse width
56
44
30
–
58
46
35
–
60
50
50
–
–
75K
75K
75K ns
Shaded areas contain advance information.
Refresh cycle
-30
-35
-50
Std
Symbol
Parameter
Min
Max
–
Min
10
8
Max
–
Min
10
10
0
Max Unit
Notes
tCSR
CAS setup time (CAS-before-RAS)
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
10
7
–
–
–
ns
ns
ns
3
3
tCHR
–
–
tRPC
0
–
0
–
CAS precharge time
(CAS-before-RAS counter test)
tCPT
8
–
8
–
8
–
ns
Shaded areas contain advance information.
Output enable
-30
-35
-50
Min Max Unit
Std
Symbol
tROH
tOEA
Parameter
Min
5
Max
–
Min
5
Max
–
Notes
RAS hold time referenced to OE
OE access time
5
–
8
–
8
–
ns
–
10
–
–
10
–
10 ns
tOED
OE to data delay
5
5
–
8
–
ns
ns
ns
tOEZ
Output buffer turnoff delay from OE
OE command hold time
–
8
–
8
8
tOEH
8
–
8
–
Shaded areas contain advance information.
Self refresh cycle
-30
-35
-50
Std
Symbol
Parameter
Min
Max
–
Min
Max
–
Min
Max Unit
Notes
RAS pulse width
(CBR self refresh)
tRASS
100K
100K
85
100K
85
–
–
–
ns
ns
ns
RAS precharge time
(CBR self refresh)
tRPS
85
30
–
–
–
–
CAS hold time
(CBR self refresh)
tCHS
30
30
Shaded areas contain advance information.
4/11/01; v.1.1
Alliance Semiconductor
6 of 24
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
