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AS4C1M16E5-45JC 参数 Datasheet PDF下载

AS4C1M16E5-45JC图片预览
型号: AS4C1M16E5-45JC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 1M × 16的CMOS DRAM( EDO ) [5V 1M×16 CMOS DRAM (EDO)]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 601 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C1M16E5  
®
DC electrical characteristics  
-45  
-50  
-60  
Parameter  
Symbol Test conditions  
Min Max Min Max Min Max Unit Notes  
0V Vin VCC (max)  
Pins not under test = 0V  
Input leakage current  
IIL  
-5  
-5  
+5  
+5  
-5  
-5  
+5  
+5  
-5  
-5  
+5  
+5  
µA  
µA  
Output leakage  
current  
DOUT disabled, 0V Vout VCC  
(max)  
IOL  
Operating power  
supply current  
RAS, UCAS, LCAS, Address cycling;  
RC=min  
ICC1  
ICC2  
155  
2.0  
145  
2.0  
135 mA 4,5  
2.0 mA  
t
TTL standby power  
supply current  
RAS = UCAS = LCAS VIH,  
all other inputs at VIH or VIL  
Average power supply  
current, RAS refresh  
mode or CBR  
RAS cycling, UCAS = LCAS VIH,  
ICC3  
t
RC = min of RAS low after XCAS  
145  
135  
125 mA  
4
low.  
EDO page mode  
average power supply  
current  
RAS = VIL, UCAS or LCAS,  
address cycling: tHPC = min  
ICC4  
130  
1.0  
120  
1.0  
110 mA 4, 5  
1.0 mA  
CMOS standby power  
supply current  
RAS = UCAS = LCAS = VCC - 0.2V,  
F = 0  
ICC5  
VOH IOUT = -5.0 mA  
VOL IOUT = 4.2 mA  
2.4  
2.4  
2.4  
V
V
Output voltage  
0.4  
0.4  
0.4  
CAS before RAS  
refresh current  
RAS, UCAS or LCAS cycling, tRC  
min  
=
mA  
ICC6  
155  
145  
135  
4/11/01; v.1.0  
Alliance Semiconductor  
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