ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
T = 25°C unless otherwise specified
A
ALD114813/ALD114913
Parameter
Symbol
Min
Typ
Max
-1.26
Unit
Test Conditions
I =1µA
DS
Gate Threshold Voltage
V
V
-1.34
-1.30
V
GS(th)
V
= 0.1V
DS
I =1µA
DS
Offset Voltage
7
5
20
mV
OS
V
-V
GS(th)1 GS(th)2
Offset Voltage Tempco
TC
TC
µV/ °C
mV/ °C
V
= V
DS1 DS2
VOS
GateThreshold Voltage Tempco
-1.7
0.0
+1.6
I
D
I
D
I
D
= 1µA
= 20µA, V
= 40µA
VGS(th)
= 0.1V
DS
On Drain Current
I
12.0
3.0
mA
V
V
V
= +8.2 V
= +2.7V
= +5V
DS (ON)
GS
GS
DS
Forward Transconductance
G
FS
1.4
mmho
V
V
= +2.7V
= +7.7V
GS
DS
Transconductance Mismatch
Output Conductance
∆G
FS
1.8
68
%
G
OS
µmho
V
V
=+2.7V
= +7.7V
GS
DS
Drain Source On Resistance
Drain Source On Resistance
R
500
1.3
Ω
V
V
= 0.1V
= +2.7V
DS (ON)
DS (ON)
DS
GS
R
KΩ
V
V
= 0.1V
= +0.0V
DS
GS
Drain Source On Resistance
Tolerance
∆R
∆R
BV
I
7
%
%
V
DS (ON)
DS (ON)
DSX
Drain Source On Resistance
Mismatch
0.5
Drain Source Breakdown
Voltage
10
I
= 1.0µA
DS
V
= -2.3V
GS
Drain Source Leakage Current1
10
3
100
4
pA
nA
V
=-2.3V, V
=+5V
DS
DS (OFF)
GSS
GS
T
= 125°C
A
Gate Leakage Current1
I
30
1
pA
nA
V
= 0V V
= +10V
DS
GS
T
A
=125°C
Input Capacitance
C
C
2.5
0.1
pF
pF
ISS
Transfer Reverse Capacitance
RSS
+
+
Turn-on Delay Time
Turn-off Delay Time
t
t
10
10
60
ns
ns
dB
V
V
= 5V R = 5KΩ
L
on
= 5V R = 5KΩ
off
L
Crosstalk
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD114813/ALD114913
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
