ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
-13.2V
-13.2V
500 mW
DS
GS
Operating temperature range PA, SA, PB, SB package
DA, DB package
Storage temperature range
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified
ALD1107
ALD1117
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Gate Threshold
Voltage
V
-0.4
-0.7
-1.0
-0.4
-0.7
-1.0
V
I
= -1.0µA V
= V
GS
T
DS
DS
Offset Voltage
V
2
10
2
10
mV
I = -10µA V = V
DS GS
OS
DS
V
-V
GS1 GS2
Gate Threshold
Temperature
Drift 2
TC
-1.3
-2
-1.3
-2
mV/°C
VT
On Drain
Current
I
-1.3
-1.3
mA
V
V
= V
= -5V
DS
DS (ON)
GS
DS
Transconductance
Mismatch
G
0.25
0.67
0.5
40
0.25
0.67
0.5
40
mmho
%
= -5V I = -10mA
DS
IS
∆G
fs
Output
Conductance
G
OS
µmho
V
V
= -5V I = -10mA
DS
DS
DS
Drain Source
On Resistance
R
1200
0.5
1800
1200
0.5
1800
Ω
%
V
= -0.1V V
= -0.1V V
= -5V
= -5V
DS (ON)
GS
GS
Drain Source
On Resistance ∆R
Mismatch
V
DS (ON)
DS
Drain Source
Breakdown
Voltage
BV
-12
-12
I
= -1.0µA V = 0V
DSS
DS GS
Off Drain
Current1
I
10
0.1
1
400
4
10
0.1
1
400
4
pA
nA
V
T
= -12V V
= 0V
GS
DS (OFF)
DS
= 125°C
A
Gate Leakage
Current
I
10
1
10
1
pA
nA
V
= 0V
V
= -12V
GS
GSS
DS
= 125°C
T
A
Input
Capacitance2
C
3
3
pF
ISS
1
Notes:
Consists of junction leakage currents
Sample tested parameters
2
ALD1107/ALD1117
Advanced Linear Devices
2