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ALD1107PB 参数 Datasheet PDF下载

ALD1107PB图片预览
型号: ALD1107PB
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD /双P沟道MOSFET MATCHED ARRAY [QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY]
分类和应用: 晶体晶体管开关光电二极管输入元件
文件页数/大小: 6 页 / 65 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS  
Drain-source voltage, V  
Gate-source voltage, V  
Power dissipation  
-13.2V  
-13.2V  
500 mW  
DS  
GS  
Operating temperature range PA, SA, PB, SB package  
DA, DB package  
Storage temperature range  
0°C to +70°C  
-55°C to +125°C  
-65°C to +150°C  
+260°C  
Lead temperature, 10 seconds  
OPERATING ELECTRICAL CHARACTERISTICS  
T
A
= 25°C unless otherwise specified  
ALD1107  
ALD1117  
Typ  
Test  
Parameter  
Symbol  
Min  
Typ  
Max  
Min  
Max  
Unit  
Conditions  
Gate Threshold  
Voltage  
V
-0.4  
-0.7  
-1.0  
-0.4  
-0.7  
-1.0  
V
I
= -1.0µA V  
= V  
GS  
T
DS  
DS  
Offset Voltage  
V
2
10  
2
10  
mV  
I = -10µA V = V  
DS GS  
OS  
DS  
V
-V  
GS1 GS2  
Gate Threshold  
Temperature  
Drift 2  
TC  
-1.3  
-2  
-1.3  
-2  
mV/°C  
VT  
On Drain  
Current  
I
-1.3  
-1.3  
mA  
V
V
= V  
= -5V  
DS  
DS (ON)  
GS  
DS  
Transconductance  
Mismatch  
G
0.25  
0.67  
0.5  
40  
0.25  
0.67  
0.5  
40  
mmho  
%
= -5V I = -10mA  
DS  
IS  
G  
fs  
Output  
Conductance  
G
OS  
µmho  
V
V
= -5V I = -10mA  
DS  
DS  
DS  
Drain Source  
On Resistance  
R
1200  
0.5  
1800  
1200  
0.5  
1800  
%
V
= -0.1V V  
= -0.1V V  
= -5V  
= -5V  
DS (ON)  
GS  
GS  
Drain Source  
On Resistance R  
Mismatch  
V
DS (ON)  
DS  
Drain Source  
Breakdown  
Voltage  
BV  
-12  
-12  
I
= -1.0µA V = 0V  
DSS  
DS GS  
Off Drain  
Current1  
I
10  
0.1  
1
400  
4
10  
0.1  
1
400  
4
pA  
nA  
V
T
= -12V V  
= 0V  
GS  
DS (OFF)  
DS  
= 125°C  
A
Gate Leakage  
Current  
I
10  
1
10  
1
pA  
nA  
V
= 0V  
V
= -12V  
GS  
GSS  
DS  
= 125°C  
T
A
Input  
Capacitance2  
C
3
3
pF  
ISS  
1
Notes:  
Consists of junction leakage currents  
Sample tested parameters  
2
ALD1107/ALD1117  
Advanced Linear Devices  
2