A7525
AiT Semiconductor Inc.
www.ait-ic.com
DC-DC CONVERTER BOOST(STEP-UP)
1.2MHz, MICROPOWER SYNCHRONOUS
ELECTRICAL CHARACTERISTICSNOTE2
VIN =1.2V, VOUT=3.3V, TA=25°C, Test Circuit of Figure 1, unless otherwise noted.
Parameter
Condition
Min.
Typ.
1.0
Max.
Unit
V
I
OUT =1mA
-
-
-
Minimum Start-Up Voltage
IOUT =40mA
VCE = VIN
1.8
-
Minimum Operating Voltage
Output Voltage Range
Feedback Voltage
－
0.8
-
V
V
2.5
1.192
-
-
5
-40℃≤TA≤ 85℃
VCE = 0V
1.230
0.01
300
0.1
1.268
V
Quiescent Current(Shutdown)
Quiescent Current(Active)
NMOS Switch Leakage
PMOS Switch Leakage
1
μA
μA
μA
μA
Ω
Measured on VOUT
VLX = 5V
500
-
-
5
VLX = 0V
0.1
5
V
OUT = 3.3V
VOUT = 5V
OUT = 3.3V
VOUT = 5V
OUT = 3.3V, IOUT = 1mA
0.40
0.35
0.70
0.60
3.300
5.000
1
-
NMOS Switch ON Resistance
PMOS Switch ON Resistance
Output Voltage
-
-
Ω
V
-
-
Ω
-
-
Ω
V
3.201
3.399
V
VOUT = 5V , IOUT = 1mA, VIN = 2.4V
VIN = 0.8V to 3.0V, IOUT = 10mA
IOUT = 1mA to 100mA
4.850
5.150
V
Line Regulation
-
-
-
-
%/V
%/mA
Load Regulation
0.02
NMOS Current Limit
Current Limit Delay to Output
Max Duty Cycle
600
-
850
40
-
-
mA
ns
NOTE 3
VFB = 1.15V, -40℃≤TA≤ 85℃
80
85
-
%
0.95
0.85
0.35
-
1.2
1.2
0.60
0.01
1.5
1.5
1.50
1
MHz
MHz
V
Switching Frequency
-40℃ ≤TA ≤85℃
CE Input Threshold
CE Input Current
VCE = 5.5V
μA
NOTE2:100% production test at +25°C. Specifications over the temperature range are guaranteed by design and characterization.
NOTE3: Guaranteed by design.
REV1.1
- JAN 2012 RELEASED, SEP 2017 UPDATED -
- 4 -
AITSEMI [ AiT Semiconductor ]
