Data Sheet
January 2001
A1112 High-Power 1550 nm DFB Source Lasers
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Operating Case Temperature Range
Storage Temperature Range
TC
Tstg
IF
–20
–40
65
70
°C
°C
Forward Current (Laser)
A1112PB, A1112NB
A1112PC, A1112NC
—
—
275
400
mA
mA
Reverse Voltage (Laser)
Photodiode Reverse Voltage
TEC Voltage
VR
—
—
—
2.0
10
V
V
V
VRPD
VTEC
ITEC
2.0
TEC Current
Cooling
—
—
1.8
1.5
A
A
Heating
Electrical/Optical Characteristics
Table 1. Optical Characteristics (25 °C Case Temperature)
Parameter
Symbol
Conditions
Min
Max
Unit
Optical Output Power
A1112PB, A1112NB
A1112PC, A1112NC
PO
—
—
30
40
—
—
mW
mW
Center Wavelength
λC
∆V
IOP
IOP
IOP
1540
—
1560
3
nm
MHz
dB
Linewidth (FWHM)
Side Mode Suppression Ratio
Relative Intensity Noise
SMSR
RIN
30
—
lOP,
—
–162
dBc/Hz
40 MHz to 860 MHz
Operating Current
Threshold Current
Forward Voltage
IOP
ITH
—
—
—
—
30
20
—
250/350
35/40
2.5/3.0
—
mA
mA
V
—
VF
—
Optical Isolation
—
–20 °C to +65°C
From fiber end, IOP
—
dB
dB
V
Polarization Extinction Ratio
Reverse Voltage
TE/TM
VR
—
2.0
Table 2. Electrical Characteristics
Parameter
Symbol
Condition
Min
Max
Unit
Monitor Photodiode Reverse Voltage
Monitor Photodiode Current
TEC Current
VRMPD
IMPD
ITEC
Iop
—
—
40
—
10
2000
1.8
V
µA
A
∆T = 40 °C
∆T = 40 °C
25 °C
TEC Voltage
VTEC
RTH
—
2.2
V
Thermistor Resistance
9.0
11.0
kΩ
2
Agere Systems Inc.