ELECTRO-OPTICAL CHARACTERISTICS OF TOP AND BOTTOM PHOTODIODES
@ + 23°C AND VOLTS BIAS UNLESS OTHERWISE SPECIFIED
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Active Area Diameter (Top)
Active Area Diameter (Bottom)
3.5
3.1
mm
mm
300 to
1100
950 to
1100
Spectral Range of (Top)
nm
nm
Spectral Range of (Bottom)
MW
Shunt Resistance
Responsivity
Bias: 10mV
50
200
0.60
0.155
12
45
290
Wavelength = 950 nm
Wavelength = 1050
Wavelength = 950
Wavelength = 1050
0.50
0.135
A/W
A/W
Reak NEP (Bottom)
Peak NEP (Top)
Peak NEP (Bottom)
Capacitance
25
100
305
fw/√Hz
fw/√Hz
pF
Operating Temperature
Storage Temperature
ꢀ55
ꢀ55
+100
+100
ºC
ºC
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987ꢀ0146 • Fax (805) 484ꢀ9935 • www.advancedphotonix.com
REV 6/11/09
2
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
