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SD113-24-21-021 参数 Datasheet PDF下载

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型号: SD113-24-21-021
PDF下载: 下载PDF文件 查看货源
内容描述: 红增强双电池硅光电二极管 [Red Enhanced Bi-Cell Silicon Photodiode]
分类和应用: 光电电池二极管光电二极管
文件页数/大小: 1 页 / 103 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Red Enhanced Bi-Cell Silicon Photodiode
SD 113-24-21-021
PACKAGE DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.169 [4.29]
.157 [3.99]
.075 [1.91]
3X Ø.018 [0.46]
1
Ø.264 [6.70]
Ø.256 [6.50]
Ø.330 [8.38]
Ø.320 [8.13]
Ø.200 [5.08]
PIN CIRCLE
2
45°
80°
VIEWING
ANGLE
.010 [0.25] MAX
GLASS ABOVE CAP
TOP EDGE
3X .500 [12.7] MIN
Ø .362 [9.19]
Ø .357 [9.07]
1
CELL 1
2
CELL 2
3
3
ANODE CELL #1
CASE GROUND &
COMMON CATHODE
ANODE CELL #2
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.134 [3.40]
1
2
2X .048 [1.22] ACTIVE AREA
.004 [0.10] GAP
2X .100 [2.54] ACTIVE AREA
.120 [3.05]
TO-46 PACKAGE
SCHEMATIC
TO-5 PACKAGE
FEATURES
Low noise
Red enhanced
High shunt resistance
High response
DESCRIPTION
The
SD 113-24-21-021
is a red enhanced Bi-Cell
silicon photodiode used for nulling, centering, or
measuring small positional changes packaged in a
hermetic TO-5 metal package.
0.70
Responsivity (A/W)
0.60
0.50
0.40
0.30
0.20
0.10
0.00
APPLICATIONS
• Emitter Alignment
• Position sensing
• Medical and Industrial
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
V
BR
T
STG
T
O
T
S
PARAMETER
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-55
-40
MIN
MAX
50
+150
+125
+240
UNITS
V
°C
°C
°C
SPECTRAL RESPONSE
1000
1050
1100
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I
D
R
SH
C
J
C
J
lrange
R
V
BR
NEP
t
r
CHARACTERISTIC
Dark Current
Shunt Resistance
Junction Capacitance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
V
R
=5 V
V
R
= 10 mV
V
R
= 0 V,
f
= 1 MHz
V
R
= 10V,
f
= 1 MHz
Spot Scan
l=
633nm, V
R
= 0 V
l=
900nm, V
R
= 0 V
I = 10
μA
V
R
= 0V @
l=950nm
RL = 50
Ω,V
R
= 0 V
RL = 50
Ω,V
R
= 10 V
MIN
250
TYP
0.9
MAX
5.0
UNITS
nA
MW
pF
1100
0.36
0.55
50
2.5x10
-14
190
13
nm
A/W
V
W/
Hz
nS
60
13
350
0.32
0.50
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com
1150
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
* 1/16 inch from case for 3 seconds max.