5STP 20F1601
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
45
40
35
30
25
20
15
5,5
25°C
125°C
i2dt
I TSM
ò
5
4,5
4
3,5
3
2,5
0
0,5
1
1,5
2
2,5
3
1
10
100
t ( ms )
VT ( V )
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
14
7
VFGM
12
6
5
4
3
2
1
0
DC = P GAVm
500µs
1ms
10
8
-40 °C
+25 °C
6
+125 °C
4
10ms
DC = P GAVm
2
VGTmin
0
0
2
4
6
8
10
I G ( A )
12
0
0,5
1
I
G ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 4 of 6
ABB [ THE ABB GROUP ]
