5STP 16F2801
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
A
Average on-state current
RMS on-state current
IT(AV)M
IT(RMS)
ITSM
Half sine wave, Tc = 70°C
1512
2375
23.6×103
A
Peak non-repetitive surge
current
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
A
Limiting load integral
I2t
2.79×106 A2s
25.2×103
Peak non-repetitive surge
current
ITSM
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
A
Limiting load integral
Characteristic values
Parameter
I2t
2.64×106 A2s
Symbol Conditions
min
typ
max
1.55
Unit
V
On-state voltage
Threshold voltage
Slope resistance
Holding current
VT
V(T0)
rT
IT = 2000 A, Tvj = 125 °C
IT = 1900 A - 5800 A, Tvj= 125 °C
1.02
V
0.265
mW
mA
mA
mA
mA
IH
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
170
90
Latching current
IL
450
350
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
IT = IT(AV)
Cont.
200
A/µs
,
f = 50 Hz
Cont.
Critical rate of rise of on-
state current
di/dtcrit
1000
A/µs
µs
VD £ 1880 V,
f = 1 Hz
IFG = 2 A, tr = 0.3 µs
Circuit-commutated turn-off tq
time
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -12.5 A/µs,
200
VD £ 0.67×VDRM, dvD/dt = 50V/µs
Characteristic values
Parameter
Symbol Conditions
min
typ
2600
max
Unit
Recovery charge
Qrr
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V,
µAs
diT/dt = -12.5 A/µs
Gate turn-on delay time
tgd
2
µs
VD = 0.4×VRM, IFG = 2 A,
tr = 0.3 µs, Tvj = 25 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1064-01 March 05
page 2 of 6
ABB [ THE ABB GROUP ]
