5STP 12N8500
Fig. 6 Surge on-state current vs. pulse length. Half-
Fig. 7 Surge on-state current vs. number of pulses.
sine wave.
Half-sine wave, 10 ms, 50Hz.
IG (t)
IGM
IGon
» 2..5 A
³ 1.5 IGT
100 %
90 %
IGM
diG/dt ³ 2 A/ms
tr
£ 1 ms
tp(IGM
)
» 5...20 ms
diG/dt
IGon
10 %
tr
t
tp (IGM
)
tp (IGon
)
Fig. 8 Recommended gate current waveform.
Fig. 9 Max. peak gate power loss.
I
RM(A)
400
300
ITRM = 2000 A
Tj = Tjmax
max
min
200
102
90
80
70
60
50
40
30
30
1
2
3
4
5
6
7 8 910
20
-diT/dt (A/µs)
Fig. 10 Recovery charge vs. decay rate of on-state
Fig. 11 Peak reverse recovery current vs. decay rate
current.
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 5 of 6
ABB [ THE ABB GROUP ]
