5STP 12F4200
On-state
Maximum rated values 1)
Parameter
Average on-state current
RMS on-state current
Peak non-repetitive surge
current
Symbol Conditions
min
typ
max
1150
1800
15000
Unit
ITAVM
ITRMS
ITSM
Half sine wave, Tc = 70°C
A
A
A
tp = 10 ms, Tvj = 125°C,
VD = VR = 0 V
Limiting load integral
I2t
1125
16000
kA2s
A
Peak non-repetitive surge
ITSM
tp = 8.3 ms, Tvj = 125°C,
VD = VR=0 V
current
Limiting load integral
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I2t
1062
kA2s
Symbol Conditions
min
typ
max
2.1
0.95
0.575
80
60
500
200
Unit
VT
VT0
rT
IT = 2000 A, Tvj= 125°C
IT = 600 A - 1800 A, Tvj= 125°C
V
V
mΩ
mA
mA
mA
mA
IH
Tvj = 25°C
Tvj = 125°C
Tvj = 25°C
Tvj = 125°C
Latching current
IL
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
typ
max
100
Unit
Critical rate of rise of on-
di/dtcrit
Cont.
f = 50 Hz
Cont.
A/µs
A/µs
µs
state current
Tvj = 125°C, ITRM = 2000 A,
VD ≤ 0.67⋅VDRM
,
Critical rate of rise of on-
state current
di/dtcrit
1000
IFG = 2 A, tr = 0.5 µs
f = 1Hz
Circuit-commutated turn-off tq
time
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -5 A/µs,
600
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
Characteristic values
Parameter
Recovery charge
Symbol Conditions
min
2500
max
4000
Unit
µAs
Qrr
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -5 A/µs
Delay time
td
2
µs
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1021-03 Jan. 02
page 2 of 6
ABB [ THE ABB GROUP ]
