5STP 10D1601
25°C
125°C
7000
6000
5000
4000
3000
2000
1000
0
26
24
22
20
18
16
14
12
10
8
1,6
i2dt
ò
1,5
1,4
1,3
1,2
1,1
1
I TSM
0,9
0,8
0,7
0
1
2
3
V T ( V )
4
1
10
100
t ( ms )
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
14
7
VFGM
12
6
5
4
3
2
1
0
DC = P GAVm
500µs
1ms
10
8
-40 °C
+25 °C
6
+125 °C
4
10ms
DC = P GAVm
2
VGTmin
0
0
2
4
6
8
10
I G ( A )
12
0
0,5
1
I
G ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1057-01 March 05
page 4 of 6
ABB [ THE ABB GROUP ]
