5SNA 2400E170100
5)
Diode characteristic values
Parameter
Symbol Conditions
min typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
1.65 2.0
V
6)
Forward voltage
VF
Irr
IF = 2400 A
1.7
1520
1880
590
2.0
Reverse recovery current
Recovered charge
A
VCC = 900 V,
IF = 2400 A,
VGE = ±15 V,
RG = 0.56 W
Ls = 60 nH
Qrr
trr
µC
ns
1025
580
Reverse recovery time
Reverse recovery energy
870
inductive load
420
Erec
mJ
720
5)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
6)
7)
Thermal properties
Parameter
Symbol Conditions
min typ max Unit
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.007 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.012 K/W
2)
7)
IGBT thermal resistance
case to heatsink
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K
0.009
0.018
K/W
K/W
Diode thermal resistance
case to heatsink
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
7)
Mechanical properties
Parameter
Symbol Conditions
min typ max Unit
L x W x H
190 x 140 x 38
Dimensions
Typical , see outline drawing
mm
Term. to base: 23
according to IEC 60664-1
and EN 50124-1
Clearance distance in air
da
mm
Term. to term: 19
Term. to base: 33
Term. to term: 32
according to IEC 60664-1
and EN 50124-1
Surface creepage distance
Mass
ds
m
mm
g
1500
7)
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 3 of 9
ABB [ THE ABB GROUP ]
