$THYꢀ !F &ꢄ
Vv
Hrpuhvphyꢀꢁrꢁvr
Qhꢁhrrꢁ
x
x
L W
11.9 11.9
Overall die
mm
mm
mm
exposed
front metal
x
x
L W (except gate pad)
9.9 9.9
Dimensions
x
x
L W
1.2 1.2
gate pad
thickness
front
210 ± 15
µm
µm
µm
AISi1
4
1)
Metallization
back
AI / Ti / Ni / Ag
1.2
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA2033-01 April 02.
Pyvrꢀqꢁhvt
G
Emitter
Ir)ꢀhyyꢀqvrvꢀhꢁrꢀuꢀvꢀ
UuvꢀvꢀhꢀryrpꢁhvpꢀrvvrꢀqrvprꢂꢀyrhrꢀirꢁrꢀurꢀvrꢁhvhyꢀhqhꢁqꢀD@8ꢀ%ꢄ&#&ꢅ ꢂꢀ8uhꢃꢀDYꢃ
677ꢀTvrꢁyhqꢀGqꢂꢀTrvpqpꢁꢀꢁrrꢁrꢀurꢀꢁvtuꢀꢀpuhtrꢀrpvsvphvꢀvuꢀvprꢃ
Doc. No. 5SYA1619-01 July 03
page 3 of 5
ABB [ THE ABB GROUP ]
