5SLX 12M1711
400
350
300
250
200
150
100
50
150
125
100
75
300
250
200
150
100
50
Vcc = 900 V
di/dt = 1000 A/µs
Tvj = 125 °C
25°C
Ls = 800 nH
Irr
125°C
Qrr
50
Erec
25
0
0
0
0
50 100 150 200 250 300 350 400
IF [A]
0
0.5
1
1.5
2
2.5
VF [V]
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
300
200
100
0
200
100
75
50
25
0
200
VCC = 900 V
IF = 200 A
di/dt = 1000 A/µs
Tvj = 125 °C
Irr
V
cc = 900 V
IF = 200 A
0
Tvj = 125 °C
Ls = 800 nH
Ls = 800 nH
150
100
50
-200
-400
-600
-800
IR
Qrr
Erec
-100
-200
-300
-400
VR
-1000
0
-1200
0
200
400
600
800 1000 1200
0
400
800 1200 1600 2000 2400
time [ns]
di/dt [A/µs]
Typical diode reverse recovery behaviour
Typical reverse recovery vs. di/dt
Fig. 3
Fig. 4
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1663-01 Feb. 05
page 2 of 3
ABB [ THE ABB GROUP ]
