V
RRM
I
F(AV)M
I
FSM
V
(T0)
r
T
V
DC-link
=
=
=
=
=
=
4500
1400
25×10
3
1.2
0.32
2200
V
A
A
V
mΩ
V
Fast Recovery Diode
5SDF 14H4505
Doc. No. 5SYA1110-02 Oct. 06
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Optimized for use as freewheeling diode in GTO
converters with low DC-link voltages
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Permanent DC voltage for 100 FIT
failure rate
Characteristic values
Symbol Conditions
V
RRM
V
DC-link
f = 50 Hz, t
p
= 10ms, T
vj
= 125°C, Note 1
Ambient cosmic radiation at sea level in open
air. (100% Duty)
min
typ
Value
4500
2200
Unit
V
V
Parameter
Repetitive peak reverse current
Symbol Conditions
I
RRM
V
R
= V
RRM
, T
vj
= 125°C
max
50
Unit
mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below 0 °C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
m
a
a
Device unclamped
Device clamped
min
36
typ
40
max
44
50
200
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
min
25.9
30
20
typ
max
0.83
26.4
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.