ABB Semiconductors AG
5SDA 16F3806
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
1620 A
2540 A
20.5 kA
22.3 kA
Half sine wave, TC = 85°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
Tj =
160°C
After surge:
I2t
Limiting load integral
A2s
A2s
VD = VR = 0V
2100×103
2070×103
VF0
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
1.03 V
= 1000 - 3000 A
Tj =
Tj =
160°C
25°C
rF
0.32
mW
VF min
VF max
1.70 V
2.00 V
IF
=
4000 A
Thermal
Tj
Storage and operating
-40...160°C
junction temperature range
Thermal resistance
junction to case
RthJC
40 K/kW Anode side cooled
40 K/kW Cathode side cooled
20 K/kW Double side cooled
10 K/kW Single side cooled
5 K/kW Double side cooled
RthCH
Thermal resistance case to
heat sink
24
Analytical function for transient thermal impedance:
Fm = 20...24 kN
Zth
20
16
12
8
Double Side Cooling
4
[K/kW]
Z
thJC(t) = R
i
(1-e-t/t i )
å
i=1
i
1
2
3
4
4
R (K/kW)
t I (s)
11.83
0.432
4.26
0.071
1.63
0.01
2.28
0
0.0054
2
3
4
5
2
3
4
2
3
4
2
3 4
10-3
6 7 10-2
5 6 710-1
t [s]
5 5 6 100
5 6 7 101
For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows:
-VF0 + (VF0)2 + 4*f2 *r
f
*P
IFAVM (A)
T max (°C)
Rthja (K/kW)
P (W)
Tc (°C)
RthJC (K/kW)
VF0 (V)
Ta (°C)
rF (W)
I
FAVM
=
2*f2 *r
f
f2 =
1
for DC current
T
J max - T
C
T
J max - T
A
2.5
3.1
6
for half-sine wave
for 120°el., sine
for 60° el., sine
where P =
or P =
Rthjc
Rthja
Doc. No. 5SYA 1128 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306