Advanced Analog Technology, Inc.
May 2008
ELECTRICAL CHARACTERISTICS
temperature, VDD = 5V, VDD1 = 10V.)
( VDD = 2.6V to 5.5V, TC = –40°C to 85°C , unless otherwise specified. Typical values are tested at 25°C ambient
N-MOS Switch (Channel 1)
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
3.0
MAX UNIT
I
Current Limit
A
LIM
R
I
= 1.0A
On-Resistance
0.2
Ω
ON
SWOFF
SW
I
V
= 12V
µA
Leakage Current
0.01
20.00
SW
Negative Charge Pump (Channel 2)
PARAMETER
IN2 Threshold Voltage
IN2 Input Bias Current
SYMBOL
TEST CONDITIONS
= –100
OUT2
MIN
235
–40
TYP
250
0
MAX UNIT
V
I
µA
265
40
mV
nA
IN2
I
V
= –0.25V to 0.25V
= 0V, OUT2 = –12V
IN2
B2
IN2
I
I
V
µA
OUT2 Leakage Current
OUT2 Source Current
−
20
4
−50
OFF2
V
= 0.35V, OUT2 = –10V
1
mA
OUT2
IN2
Positive Charge Pump (Channel 3)
PARAMETER
IN3 Threshold Voltage
IN3 Input Bias Current
OUT3 Leakage Current
SYMBOL
TEST CONDITIONS
= 100
OUT3
MIN
1.22
–40
TYP
1.25
0
MAX UNIT
V
I
µA
1.28
40
V
IN3
I
V
= 1V to1.5V
nA
B3
IN3
I
I
V
= 1.4V, OUT3 = 28V
= 1.1V, OUT3 = 25V
IN3
µ
A
40
80
OFF3
IN3
V
OUT3 Sink Current
1
4
mA
OUT3
–
–
–
Advanced Analog Technology, Inc. –
Version 1.00
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AAT [ ADVANCED ANALOG TECHNOLOGY, INC. ]
